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this is information on a product in full production. october 2013 docid025459 rev 1 1/17 STL31N65M5 n-channel 650 v, 0.135 typ., 15 a mdmesh? v power mosfet in a powerflat? 8x8 hv package datasheet - production data figure 1. internal schematic diagram features ? worldwide best r ds(on) * area ? higher v dss rating and high dv/dt capability ? excellent switching performance applications ? switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 3 3 ' $ 0ower&,!4?x(6 "ottomview !-v $ ' 3 order code v ds r ds(on) max i d STL31N65M5 710 v 0.162 15 a (1) 1. the value is rated according to r thj-case and limited by package. table 1. device summary order code marking packages packaging STL31N65M5 31n65m5 powerflat? 8x8 hv tape and reel www.st.com
contents STL31N65M5 2/17 docid025459 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid025459 rev 1 3/17 STL31N65M5 electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 650 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case and limited by package. drain current (continuous) at t c = 25 c 15 a i d (1) drain current (continuous) at t c = 100 c 12 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 60 a i d (3) 3. when mounted on fr-4 board of inch2, 2oz cu. drain current (continuous) at t amb = 25 c 2.8 a i d (3) drain current (continuous) at t amb = 100 c 1.8 a p tot (3) total dissipation at t amb = 25 c 2.8 w p tot (1) total dissipation at t c = 25 c 125 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 410 mj dv/dt (4) 4. i sd 15 a, di/dt 400 a/s, v dd = 400 v, v ds(peak) < v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb (1) 1. when mounted on fr-4 board of inch2, 2oz cu. thermal resistance junction-ambient max 45 c/w
electrical characteristics STL31N65M5 4/17 docid025459 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v 1 a v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 11 a 0.135 0.162 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1865 - pf c oss output capacitance - 45 - pf c rss reverse transfer capacitance -4-pf c o(er) (1) 1. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 80% v (br)dss -43-pf c o(tr) (2) 2. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance time related -146-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.8 - q g total gate charge v dd = 520 v, i d = 11 a, v gs = 10 v (see figure 16 ) -45-nc q gs gate-source charge - 11.5 - nc q gd gate-drain charge - 20 - nc
docid025459 rev 1 5/17 STL31N65M5 electrical characteristics 17 table 6. switching times symbol parameter test conditions min. typ. max. unit t d (v) voltage delay time v dd = 400 v, i d = 14 a, r g = 4.7 , v gs = 10 v (see figure 20 ) -46-ns t r (v) voltage rise time - 8 - ns t f (i) current fall time - 8.5 - ns t c (off) crossing time - 11 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) 1. the value is rated according to r thj-case and limited by package. source-drain current - 15 a i sdm (1),(2) 2. pulse width limited by safe operating area source-drain current (pulsed) - 60 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 15 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 15 a, di/dt= 100 a/s v dd = 100 v (see figure 17 ) -290 ns q rr reverse recovery charge - 4 c i rrm reverse recovery current - 27 a t rr reverse recovery time i sd = 15 a, di/dt= 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) -340 ns q rr reverse recovery charge - 5 c i rrm reverse recovery current - 29 a
electrical characteristics STL31N65M5 6/17 docid025459 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am16150v1 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 pcb zth powerflat 8 x 8 hv i d 3 0 20 10 0 0 10 v d s (v) 20 (a) 5 15 25 40 6v 7v v g s =9, 10v 8 v 5 15 25 3 5 am16151v1 i d 0 4 v g s (v) 8 (a) 3 6 9 5 7 v d s =25v 3 0 20 10 40 5 15 25 3 5 am16152v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =11a 50 12 3 00 200 100 0 400 500 v d s v d s (v) am1615 3 v1 r d s (on) 0.115 0.105 0 8 i d (a) ( ) 4 10 0.125 0.1 3 5 6 2 12 14 0.145 0.155 v d s =25v am16154v1
docid025459 rev 1 7/17 STL31N65M5 electrical characteristics 17 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. drain-source diode forward characteristics figure 13. normalized v ds vs. temperature c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am16155v1 e o ss 3 2 1 0 0 200 v d s (v) ( j) 400 4 5 6 600 7 8 am16159v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 11 a v g s = 10 v am05460v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1
electrical characteristics STL31N65M5 8/17 docid025459 rev 1 figure 14. switching losses vs. gate resistance (1) 1. eon including reverse recovery of a sic diode e 150 100 50 0 0 20 r g ( ) ( j) 10 3 0 200 250 3 00 40 i d =14a v dd =400v eon eoff v g s =10v am16156v1
docid025459 rev 1 9/17 STL31N65M5 test circuits 17 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data STL31N65M5 10/17 docid025459 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid025459 rev 1 11/17 STL31N65M5 package mechanical data 17 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60
package mechanical data STL31N65M5 12/17 docid025459 rev 1 figure 21. powerflat? 8x8 hv drawing mechanical data 8 222 8 71_rev_c
docid025459 rev 1 13/17 STL31N65M5 package mechanical data 17 figure 22. powerflat? 8x8 hv recommended footprint (dimensions in mm.) 8222871_rev_c_footprint
packaging mechanical data STL31N65M5 14/17 docid025459 rev 1 5 packaging mechanical data figure 23. powerflat? 8x8 hv tape figure 24. powerflat? 8x8 hv package orientation in carrier tape. w (16.000. 3 ) e (1.750.1) f (7.500.1) a0 ( 8 . 3 00.1) p1 (12.000.1) p2 (2.00.1) p0 (4.00.1) d0 ( 1.550.05) d1 ( 1.5 min) t (0. 3 00.05) b0 ( 8 . 3 00.1) k0 (1.100.1) note: b as e a nd b u lk qua ntity 3 000 pc s 8 229 8 19_t a pe_reva
docid025459 rev 1 15/17 STL31N65M5 packaging mechanical data 17 figure 25. powerflat? 8x8 hv reel 8 229 8 19_reel_reva
revision history STL31N65M5 16/17 docid025459 rev 1 6 revision history table 9. document revision history date revision changes 31-oct-2013 1 first release.
docid025459 rev 1 17/17 STL31N65M5 17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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